Monte Carlo simulation of deep-submicron SOI and conventional nMOSFET hot-electron-induced degradation

@article{Higman1993MonteCS,
  title={Monte Carlo simulation of deep-submicron SOI and conventional nMOSFET hot-electron-induced degradation},
  author={Jack M. Higman and M. Orlowski},
  journal={31st Annual Proceedings Reliability Physics 1993},
  year={1993},
  pages={48-52}
}
  • Jack M. Higman, M. Orlowski
  • Published in
    31st Annual Proceedings…
    1993
  • Engineering
  • A coupled Monte Carlo/drift diffusion simulation is applied to an n-channel conventional bulk MOSFET and two fully depleted n-channel SOI transitors. It is found that the SOI devices are more sensitive to trapped electron charge. The models, however predict far fewer high energy electrons (and fewer generated electron-hole pairs), the net result being that the SOI devices are more resistant to hot-electron-induced degradation. Furthermore, the p/sup +/-polysilicon gate SOI devices with lower… CONTINUE READING

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