Monte Carlo Simulations of High-Performance Implant Free In$_{0.3}$Ga $_{0.7}$As Nano-MOSFETs for Low-Power CMOS Applications

@article{Kalna2007MonteCS,
  title={Monte Carlo Simulations of High-Performance Implant Free In\$_\{0.3\}\$Ga \$_\{0.7\}\$As Nano-MOSFETs for Low-Power CMOS Applications},
  author={Karol Kalna and J. A. Wilson and D. A. J. Moran and R.J.W. Hill and A. R. Long and Ravi Droopad and Matthias Passlack and I. Thayne and A. Asenov},
  journal={IEEE Transactions on Nanotechnology},
  year={2007},
  volume={6},
  pages={106-112}
}
The potential performance of implant free heterostructure In0.3Ga0.7As channel MOSFETs with gate lengths of 30, 20, and 15 nm is investigated using state-of-the-art Monte Carlo (MC) device simulations. The simulations are carefully calibrated against the electron mobility and sheet density measured on fabricated III-V MOSFET structures with a high-kappa dielectric. The MC simulations show that the 30 nm gate length implant free MOSFET can deliver a drive current of 2174 muA/mum at 0.7 V supply… CONTINUE READING

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