Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs

@article{Vasallo2006MonteCC,
  title={Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs},
  author={B. G. Vasallo and Nicolas Wichmann and S. Bollaert and Alain Cappy and Tom{\'a}s Gonz{\'a}lez and Daniel Pardo and Javier Mateos},
  journal={2006 European Microwave Integrated Circuits Conference},
  year={2006},
  pages={304-307}
}
The intrinsic static and dynamic performance of InAlAs/InGaAs double-gate high electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2D Monte Carlo simulator. Our model allows going deeply into the physical behavior of this novel device in comparison with similar standard HEMTs. Different gate lengths are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The intrinsic cut-off frequency fc of the DG-HEMTs is found to be… CONTINUE READING
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