Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

  title={Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors},
  author={A. Koudymov and Sanjeev Rai and V.. Adivarahan and M. Gaevski and Jinwei Yang and G.. Simin and M. A. Majeed Khan},
  journal={IEEE Microwave and Wireless Components Letters},
We report on the high-performance monolithically integrated RF switch based on metal-oxide-semiconductor III-N heterostructure field-effect transistors (MOSHFETs). The radio frequency (RF) switch microwave monolithic integrated circuit (MMIC) consists of three submicron-gate MOSHFETs connected into /spl pi/-type configuration. In the 0-10 GHz frequency range, the insertion loss is less than 1dB and the isolation is better than 20 dB. The switching powers well exceed 20 W per 1mm of the active… CONTINUE READING
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Low-loss high power RF switching using multigate AlGaN/GaN MOS heterostructure field-effect transistors

  • A. Koudymov, G. Simin, M. Ali, X. Hu, J. Yang, M. A. Khan
  • IEEE Electron Device Lett., vol. 23, pp. 449–451…
  • 2002
10 Excerpts

MEMS and Si micromachined circuits for high-frequency applications

  • L.P.B. Katehi, J. F. Harvey, E. Brown
  • IEEE Trans Microwave Theory Tech., vol. 50, pp…
  • 2002
1 Excerpt

Monolithic transistors SPST switch for L-band

  • J. A. Torres, J. C. Freire
  • IEEE Trans. Microwave Theory Tech., vol. 50, pp…
  • 2002

Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

  • S. Makioka, Y. Anda, K. Miyatsuji, D. Ueda
  • IEEE Trans. Electron Devices, vol. 48, pp. 1510…
  • 2001
1 Excerpt

A 7.5 kW/mm current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

  • G. Simin, X. Hu, +6 authors M. S. Shur
  • Electron. Lett., vol. 36, pp. 2043–2044, 2000.
  • 2000
1 Excerpt

Low-Insertion- Loss DP3T MMIC switch for dual-band cellular phones

  • A. Nagayam, M. Nishibe, T. Inaoka, N. Mineshima
  • IEEE J. Solid State Circuits, vol. 34, pp. 1051…
  • 1999
1 Excerpt

A GaAs high power RF single pole dual throw switch IC for digital mobile communication system

  • K. Miyatsuzi, D. Ueda
  • IEEE J. Solid State Circuits, vol. 30, pp. 979…
  • 1995

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