Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors

@article{Koudymov2004MonolithicallyIH,
  title={Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors},
  author={A. Koudymov and Sanjeev Rai and V.. Adivarahan and M. Gaevski and Jinwei Yang and G.. Simin and M. A. Majeed Khan},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2004},
  volume={14},
  pages={560-562}
}
We report on the high-performance monolithically integrated RF switch based on metal-oxide-semiconductor III-N heterostructure field-effect transistors (MOSHFETs). The radio frequency (RF) switch microwave monolithic integrated circuit (MMIC) consists of three submicron-gate MOSHFETs connected into /spl pi/-type configuration. In the 0-10 GHz frequency range, the insertion loss is less than 1dB and the isolation is better than 20 dB. The switching powers well exceed 20 W per 1mm of the active… CONTINUE READING
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