Monolithically Integrated Opto-Electrical NOR Gate Using Light Emitting Transistors

@article{Liang2020MonolithicallyIO,
  title={Monolithically Integrated Opto-Electrical NOR Gate Using Light Emitting Transistors},
  author={Y. Liang and Yun-Ting Huang and Chao-Hsin Wu and Hsin-Yu Lin},
  journal={2020 Opto-Electronics and Communications Conference (OECC)},
  year={2020},
  pages={1-3}
}
  • Y. Liang, Yun-Ting Huang, +1 author Hsin-Yu Lin
  • Published 2020
  • Materials Science
  • 2020 Opto-Electronics and Communications Conference (OECC)
  • We develop an opto-electrical NOR gate, using Light-Emitting Transistors (LET) on GaAs substrate by the monolithically integrated fabrication. By dual-input and dual-output (electrical and optical) characteristics, it can be applied to Opto-Electrical Integrated Circuits (OEICs). 

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