Monolithic three-dimensional integrated circuits using carbon nanotube FETs and interconnects

@article{Wei2009MonolithicTI,
  title={Monolithic three-dimensional integrated circuits using carbon nanotube FETs and interconnects},
  author={Hai Wei and Nishant Patil and Albert Lin and H.-S. Philip Wong and Subhasish Mitra},
  journal={2009 IEEE International Electron Devices Meeting (IEDM)},
  year={2009},
  pages={1-4}
}
We experimentally demonstrate, for the first time, monolithic three-dimensional integrated circuits consisting of multiple (up to three) layers of monolithically integrated circuits consisting of carbon nanotube field-effect transistors (CNFET) circuits and carbon nanotube (CNT) interconnects. These experimental demonstrations are made possible through a low-temperature (≪ 250°C) process, presented in this paper, for monolithic three-dimensional integration of CNFETs and CNT interconnects. Such… CONTINUE READING

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Proc

  • S. Borkar
  • Symp. VLSI Tech., pp. 58-59
  • 2009
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