Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s.

@article{Ackert2014MonolithicSW,
  title={Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s.},
  author={Jason J. Ackert and Abdullah S. Karar and John C. Cartledge and Paul Jessop and Andrew P. Knights},
  journal={Optics express},
  year={2014},
  volume={22 9},
  pages={10710-5}
}
We have fabricated a waveguide integrated monolithic silicon infrared detector. The photodiode consists of a p-i-n junction across a silicon-on-insulator (SOI) rib waveguide. Absorption is due to surface-states at the silicon/air interface of the waveguide. A 2 mm long detector shows a response of 0.045 A/W (calculated as a function of coupled light) and is capable of operation at 10 Gb/s at a reverse bias voltage of 2 V. 

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