Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser

@article{Zhou1993MonolithicOS,
  title={Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser},
  author={P. Zhou and Jianpin Cheng and J. Zolper and K. L. Lear and S. A. Chalmers and G. Allen Vawter and R E Leibenguth and A. Adams},
  journal={IEEE Photonics Technology Letters},
  year={1993},
  volume={5},
  pages={1035-1038}
}
We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500-700), low power dissipation (27 and 55 mW DC at optical output levels of 0.4 and 1.2 mW, respectively), and a high optical-to-electrical conversion efficiency (150 W/A) under DC bias conditions, thus providing a high-performance… CONTINUE READING

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Optically-controlled surface-emitting lasers,

  • W. K. Chan
  • Appl. Phys. Lett.,
  • 1991

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