Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission

Abstract

In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530-630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.

DOI: 10.1038/s41598-017-11239-4

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Cite this paper

@inproceedings{Kang2017MonolithicIO, title={Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission}, author={Chang-Mo Kang and Seok-Jin Kang and S. Mun and Soo-Young LeeJin Choi and Jung-Hong Min and SangHyeon Kim and Jae-Phil Shim and Dong-Seon Lee}, booktitle={Scientific reports}, year={2017} }