Monolithic growth of ultrathin Ge nanowires on Si(001).

@article{Zhang2012MonolithicGO,
  title={Monolithic growth of ultrathin Ge nanowires on Si(001).},
  author={J. J. Zhang and Georgios Katsaros and Francesco Montalenti and Daniele Scopece and Roman Rezaev and C. Mickel and Bernd Rellinghaus and Leo Miglio and Silvano de Franceschi and Armando Rastelli and Oliver G. Schmidt},
  journal={Physical review letters},
  year={2012},
  volume={109 8},
  pages={
          085502
        }
}
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the… 

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