Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

@article{Ylimaula2003MonolithicSC,
  title={Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit},
  author={Mirja Ylimaula and M. Aberg and Jyrki Kiihamaki and Hannu Ronkainen},
  journal={ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705)},
  year={2003},
  pages={611-614}
}
We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator. 

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