Monolithic AlAs– InGaAs– InGaP– GaAs HRT-FETS With PVCR of 960 at 300 K

@inproceedings{Lee2005MonolithicAI,
  title={Monolithic AlAs– InGaAs– InGaP– GaAs HRT-FETS With PVCR of 960 at 300 K},
  author={Christine Lee and Wesley Chih-Wei Hsu and Jimmy C. Huang and Ying Chen and Hai Chen},
  year={2005}
}
This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AlAs-In/sub 0.25/Ga/sub 0.75/As-AlAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In/sub 0.49/Ga/sub 0.51/P-In/sub 0.25/Ga/sub 0.75/As-GaAs /spl delta/-high-electron mobility transistor. A peak-to-valley current ratio in… CONTINUE READING

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