Monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

@article{Xiong2016Monolithic5G,
title={Monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter},
author={Chi Xiong and Douglas M. Gill and Jonathan E. Proesel and Jason S. Orcutt and Wilfried E. Haensch and William M. J. Green},
journal={arXiv: Optics},
year={2016},
volume={3},
pages={1060-1065}
}
• Published 26 August 2016
• Physics
• arXiv: Optics
Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using…
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References

SHOWING 1-10 OF 25 REFERENCES

• Physics
Optics express
• 2014
It is demonstrated that PAM order selection can be optimally chosen as a function of the desired throughput and the ability of the proposed transmitter to exhibit software-defined transmission for short reach applications by selecting Pam order, symbol rate and pulse shape is demonstrated.
• Physics
Journal of Lightwave Technology
• 2013
Current short-range optical interconnects capacity is moving from 100 to 400 Gb/s and beyond. Direct modulation of several laser sources is used to minimize bandwidth limitations of current optical
• Physics
2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers
• 2013
Two CMOS-MZI-based optical transmitters, NRZ or configurable PAM-N (N = 4,16), featuring 20Gb/s data rate and sub-pJ/bit modulation energy (PAM-4) using a 1V supply are presented.
• Physics
• 2005
The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
• Physics
Nature
• 2005
Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
The various arguments for introducing optical interconnections to silicon CMOS chips are summarized, and the challenges for optical, optoelectronic, and integration technologies are discussed. Optics
• Computer Science
2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
• 2009
Results are described for both near and long-term chip-to-chip optical interconnect architectures that replace electrical interconnect between chips with its terahertz bandwidth, low loss, and low cross-talk.
• Physics
Journal of Lightwave Technology
• 2013
We design and demonstrate a new microring modulator geometry utilizing low-resistance interior ridge contacts and a hard outer waveguide wall to achieve high-speed operation in a device with a large
• Physics
Optics express
• 2012
A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a V(π)L of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is demonstrated. The
• Physics
2015 IEEE International Electron Devices Meeting (IEDM)
• 2015
A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented and can offer enhanced performance and yield in hybrid-assembly for applications at 25 Gbaud and beyond.