Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology

@article{Samal2016Monolithic3I,
  title={Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology},
  author={Sandeep Kumar Samal and Deepak Nayak and Motoi Ichihashi and Srinivasa Banna and Sung Kyu Lim},
  journal={2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)},
  year={2016},
  pages={1-2}
}
In this paper, we conduct a comprehensive design comparison of 2D ICs, monolithic 3D ICs and TSV-based 3D ICs using a silicon-validated 14nm FinFET foundry technology and commercial quality designs. Through full-chip layouts and sign-off analysis using commercial-grade tools, the potential of monolithic 3D IC is explored and validated in terms of power, performance and area against that of TSV-based 3D ICs and 2D ICs. 
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