Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.

@article{Das2008MonitoringDB,
  title={Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.},
  author={A. Das and Simone Pisana and Biswanath Chakraborty and Stefano Piscanec and Surajit Saha and Umesh V. Waghmare and Kostya S. Novoselov and H. R. Krishnamurthy and Andre K. Geim and Andrea C. Ferrari and Aditya Sood},
  journal={Nature nanotechnology},
  year={2008},
  volume={3 4},
  pages={
          210-5
        }
}
The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating. Electrochemical top gating is widely used for polymer transistors, and has also been successfully applied to carbon nanotubes. Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported. Such high doping levels are possible… Expand
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