Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential

  title={Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential},
  author={Christophe Krzeminski and Quentin Brulin and Val{\'e}rie Cuny and Emmanuel Lecat and Evelyne Lampin and Fabrizio Cleri},
  journal={arXiv: Computational Physics},
The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is constructed with the method of Wooten, Winer, and Weaire. The amorphous on crystalline stack is annealed afterward on a wide range of temperature and time using five different interatomic potentials: Stillinger-Weber, Tersoff, EDIP, SW115, and Lenosky. The simulations are exploited to systematically extract the… 
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  • Luedtke, Landman
  • Materials Science
    Physical review. B, Condensed matter
  • 1989
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    Physical review. B, Condensed matter
  • 1987
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