Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

@inproceedings{Lubyshev2008MolecularBE,
  title={Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates},
  author={Dmitri Lubyshev and Joel M. Fastenau and Yanxia Wu and Wei Kang Liu and Mayank T. Bulsara and Eugene A. Fitzgerald and W. E. Hoke},
  year={2008}
}
A direct growth approach using composite metamorphic buffers was employed for monolithic integration of InP-based high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) on Ge and Ge-on-insulator (GeOI)/Si substrates using molecular beam epitaxy. GaAs layers nucleated on these substrates and grown to a thickness of 0.5μm were optimized to minimize the nucleation and propagation of antiphase boundaries and threading dislocations, and exhibited an atomic force… CONTINUE READING