Molecular beam epitaxy growth of PbSe on BaF 2-coated Si „ 111 ... and observation of the PbSe growth interface

@inproceedings{Wu1999MolecularBE,
  title={Molecular beam epitaxy growth of PbSe on BaF 2-coated Si „ 111 ... and observation of the PbSe growth interface},
  author={Han Zhi Wu and Xiang Ming Fang and R. Pito Salas and D. W. McAlister and Patrick J. McCann},
  year={1999}
}
Epitaxial growth of PbSe/BaF 2/CaF2 heterostructures was carried out by molecular beam epitaxy ~MBE! on Si~111! wafers. Successful transfer of 3mm-thick PbSe epilayers was accomplished by bonding the MBE-grown samples face down to polished copper plates followed by the removal of the silicon substrate by dissolving the BaF 2 buffer layer in water. High-resolution x-ray diffraction measurements demonstrated that the PbSe epilayer maintained high-crystalline quality after transfer. In addition… CONTINUE READING