Molecular beam epitaxy-grown PbSnTe-PbEuSeTe buried heterostructure diode lasers


Buried heterostructure (BH) PbSnTe-PbEuSeTe lasers with a PbSnTe active layer were fabricated for the first time using a two-stage molecular beam epitaxy (MBE) growth procedure. Lasers with 4- mu m-wide and 0.65- mu m-thick buried Pb/sub 0.961/Sn/sub Sn0.039/Te active layer and Pb/sub 0.985/Eu/sub 0.015/Se/sub 0.02/Te/sub 0.98/ cladding layers were grown… (More)


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