Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

@article{Zeng2013MolecularBE,
  title={Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction},
  author={Zhaoquan Zeng and Timothy A. Morgan and Dongsheng Fan and Chen Li and Yusuke Hirono and Xian Hu and Yanfei Zhao and Joon Sue Lee and Zhiming M. Wang and Jian Wang and Shui-Qing Yu and Michael E. Hawkridge and M. Benamara and Gregory J. Salamo},
  journal={AIP Advances},
  year={2013},
  volume={3},
  pages={072112-072112}
}
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high… 

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