Molecular Wires, Switches, and Memories

@article{Chen2002MolecularWS,
  title={Molecular Wires, Switches, and Memories},
  author={J. Chen and W Wang and James F. Klemic and Mark A. Reed and Blake W. Axelrod and David M. Kaschak and Adam Madison Rawlett and David W. Price and Shawn Matthew Dirk and James M. Tour and D. S. Grubisha and Dennis W. Bennett},
  journal={Annals of the New York Academy of Sciences},
  year={2002},
  volume={960}
}
Abstract: Design and measurements of molecular wires, switches, and memories offer an increased device capability with reduced elements. We report: Measurements on through‐bond electronic transport properties of nanoscale metal‐1,4‐phenylene diisocyanide‐metal junctions are reported, where nonohmic thermionic emission is the dominant process, with isocyanide‐Pd showing the lowest thermionic barrier of 0.22 eV; robust and large reversible switching behavior in an electronic device that utilizes… 

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