Molecular Wires, Switches, and Memories

@article{Chen2002MolecularWS,
  title={Molecular Wires, Switches, and Memories},
  author={J. Chen and W. Wang and J. Klemic and M. Reed and B. W. Axelrod and D. M. Kaschak and A. Rawlett and D. Price and S. Dirk and J. Tour and D. S. Grubisha and D. W. Bennett},
  journal={Annals of the New York Academy of Sciences},
  year={2002},
  volume={960}
}
  • J. Chen, W. Wang, +9 authors D. W. Bennett
  • Published 2002
  • Materials Science, Medicine
  • Annals of the New York Academy of Sciences
  • Abstract: Design and measurements of molecular wires, switches, and memories offer an increased device capability with reduced elements. We report: Measurements on through‐bond electronic transport properties of nanoscale metal‐1,4‐phenylene diisocyanide‐metal junctions are reported, where nonohmic thermionic emission is the dominant process, with isocyanide‐Pd showing the lowest thermionic barrier of 0.22 eV; robust and large reversible switching behavior in an electronic device that utilizes… CONTINUE READING
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