Molecular Beam Epitaxy Growth-Space Investigation of InAsBi and InGaAsBi on InAs

@inproceedings{Maddox2012MolecularBE,
  title={Molecular Beam Epitaxy Growth-Space Investigation of InAsBi and InGaAsBi on InAs},
  author={Scott J Maddox and Hari A. P. Nair and Vaishno Devi Dasika and E. M. Krivoy and Rodolfo Salas and Seth R. Bank},
  year={2012}
}
Highly mismatched alloys (HMA) have garnered increasing interest over the past few decades due to the promise of increased engineering flexibility in the design of advanced compound semiconductor heterostructure devices. Increased control over key device parameters such as lattice constant, bandgap, and band offsets opens the door to improved performance for a wide range of electronic and optoelectronic devices. However, the large miscibility gaps characteristic of HMA’s make these materials… CONTINUE READING

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