Modifying residual stress and stress gradient in LPCVD Si/sub 3/N/sub 4/ film with ion implantation

@article{Shi2005ModifyingRS,
  title={Modifying residual stress and stress gradient in LPCVD Si/sub 3/N/sub 4/ film with ion implantation},
  author={Wendian Shi and Haixia Alice Zhang and Shasha Wang and Guobing Zhang and Zhihong Li},
  journal={The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.},
  year={2005},
  volume={1},
  pages={824-827 Vol. 1}
}
The paper presents a method for modifying residual stress in LPCVD Si/sub 3/N/sub 4/ films. Utilizing ion implantation technology, the residual stress and stress gradient in Si/sub 3/N/sub 4/ film have been successfully modified with a wide adjustable range. An analytical model has been developed to describe the modification. The dosage and energy of ion implantation can be controlled accurately, and therefore the presented method can modify stress level precisely. With this method, the mean… CONTINUE READING

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