Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states

Abstract

Low-frequency 1/f noise in Si n-channel MOSFET's is measured from weak to strong inversion, through the relative spectral density of the drain current fluctuations<tex>S_{I}_{D}/I^{2}_{D}</tex>. Under specific conditions, a plateau is observed in the variations of<tex>S_{I}_{D}/I^{2}_{D}</tex>versus the gate voltage in weak inversion followed by a steep… (More)

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@article{Reimbold1984Modified1T, title={Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion&#8212;Influence of interface states}, author={Gilles Reimbold}, journal={IEEE Transactions on Electron Devices}, year={1984}, volume={31}, pages={1190-1198} }