Modification of surface characteristics in GaAs with dry processing

Abstract

We have studied the effects of plasma exposure on GaAs with Raman scattering, Hall mobility, capacitance-voltage (C-V), and Secondary ion mass spectroscopy (SIMS) measurements. The Raman studies show that the dependence of carrier removal on plasma species and substrate temperatures is consistent with the thermal migration of the plasma species. The free… (More)

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