Modification of hydrogen‐passivated silicon by a scanning tunneling microscope operating in air

@inproceedings{Dagata1990ModificationOH,
  title={Modification of hydrogen‐passivated silicon by a scanning tunneling microscope operating in air},
  author={John A. Dagata and Jason Schneir and Howard H. Harary and Christopher John Evans and Michael T. Postek and Joe R. Bennett},
  year={1990}
}
  • John A. Dagata, Jason Schneir, +3 authors Joe R. Bennett
  • Published 1990
  • Chemistry
  • The chemical modification of hydrogen‐passivated n‐Si (111) surfaces by a scanning tunneling microscope (STM) operating in air is reported. The modified surface regions have been characterized by STM spectroscopy, scanning electron microscopy (SEM), time‐of‐flight secondary‐ion mass spectrometry (TOF SIMS), and chemical etch/Nomarski microscopy. Comparison of STM images with SEM, TOF SIMS, and optical information indicates that the STM contrast mechanism of these features arises entirely from… CONTINUE READING

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