Modification of Porous Silicon Formation by Varying the End of Range of Ion Irradiation

Abstract

We have studied the influence of the end of range defects in silicon created by high energy protons and helium ions on subsequent porous silicon formation. The defect generation rate at the end of range is typically ten times higher than that close to the silicon surface. For low fluence irradiation, only the end-of-range region contains enough defects to… (More)

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