Modern microprocessor built from complementary carbon nanotube transistors

  title={Modern microprocessor built from complementary carbon nanotube transistors},
  author={Gage Hills and Christian Lau and Andrew Wright and Samuel H. Fuller and Mindy D. Bishop and Tathagata Srimani and Pritpal S. Kanhaiya and Rebecca Ho and Aya G. Amer and Yosi Stein and Denis Murphy and Arvind and Anantha P. Chandrakasan and Max M. Shulaker},
Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated… 

Advances in Carbon Nanotube Technologies: From Transistors to a RISC-V Microprocessor

Techniques that have recently developed to overcome outstanding challenges are summarized, enabling VLSI CNFET circuits to be experimentally realized today using standard VLSi processing and design flows and demonstrate the most complex CNF ET circuits and systems to-date.

Carbon nanotube transistor technology for More-Moore scaling

  • Q. Cao
  • Engineering
    Nano Research
  • 2021
Scaling of silicon field-effect transistors has fueled the exponential development of microelectronics in the past 60 years, but is now close to its physical limits with the critical dimensions of

Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities

Carbon nanotube field-effect transistors (CNFETs) are a promising nanotechnology for the development of energy-efficient computing. Despite rapid progress, CNFETs have only been fabricated in

Manufacturing Methodology for Carbon Nanotube Electronics

  • C. LauG. Hills M. Shulaker
  • Computer Science
    2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
  • 2020
This work shows the first complementary CNFET digital systems fabricated in a silicon-CMOS and VLSI-compatible fashion, culminating in a 16-bit microprocessor based on the RISC-V instruction set built entirely out of C NFETs.

Ambipolar carbon nanotube transistors with hybrid nanodielectric for low-voltage CMOS-like electronics

The proliferation of place-and-forget devices driven by the exponentially-growing Internet of Things industry has created a demand for low-voltage thin-film transistor (TFT) electronics based on

Carbon nanotube transistors: Making electronics from molecules

Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in

Variation-Aware Analog Circuit Sizing in Carbon Nanotube

A multi-objective deterministic sizing flow is proposed to approach the best performance of analog CNFET circuits even under device parameter process variation and can better approach the Pareto front than another common stochastic multi- objective optimizer.

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

The first-principles quantum transport approach is used to explore the performance limit of CNT FETs based on the gate-all-around (GAA) device geometry for the first time and it is found that the GAA CNTFETs can fulfill the ITRS 2028 high-performance target in the 2 nm gate-length node in terms of the on-state current, delay time, and power consumption.

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays.

High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors

Gate Spacer Investigation for Improving the Speed of HF Carbon Nanotube-based Field-Effect Transistors.

Analysis of several FETs with non-symmetrical gate electrode location in the channel, revealed a speed increase of up to 18% measured by the external transit frequency fT and maximum frequency of oscillation fmax.



Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

Carbon Nanotube Field-Effect Transistors (CNFETs) are highly promising to improve the energy efficiency of digital logic circuits. Here, we quantify the Very-Large-Scale Integrated (VLSI)

CMOS-based carbon nanotube pass-transistor logic integrated circuits

It is demonstrated that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration.

Carbon nanotube computer

This experimental demonstration is the most complex carbon-based electronic system yet realized, and a considerable advance because CNTs are prominent among a variety of emerging technologies that are being considered for the next generation of highly energy-efficient electronic systems.

Sensor-to-Digital Interface Built Entirely With Carbon Nanotube FETs

The first demonstration of a subsystem, which is a complete capacitive sensor interface circuit implemented entirely using CNFETs that can be fabricated reproducibly in a VLSI-compatible fashion is presented, made possible by a digitally oriented interface architecture and the imperfection-immune design paradigm.

Carbon nanotube circuit integration up to sub-20 nm channel lengths.

This work demonstrates the first very large scale integration (VLSI)-compatible approach to realizing CNFET digital circuits at highly scaled technology nodes, with devices ranging from 90 nm to sub-20 nm channel lengths.

Experimental demonstration of a fully digital capacitive sensor interface built entirely using carbon-nanotube FETs

This paper presents a complete sensor interface implemented entirely using CNFETs that can be fabricated reproducibly in a VLSI-compatible fashion and is based on a first-order Bang-Bang Phase-Locked Loop (BBPLL) digital architecture, which processes the sensor information entirely in the frequency domain.

Rapid Co-Optimization of Processing and Circuit Design to Overcome Carbon Nanotube Variations

  • G. HillsJie Zhang S. Mitra
  • Computer Science, Engineering
    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • 2015
This paper presents a framework that quickly evaluates the impact of CNT variations on circuit delay and noise margin, and systematically explores the large space of C NT processing options to derive optimized CNT processing and CNFET circuit design guidelines.

Tunable n-Type Doping of Carbon Nanotubes through Engineered Atomic Layer Deposition HfOX Films.

This work realizes a solid-state, air-table, very large scale integration and silicon CMOS compatible doping strategy, enabling integration of CNFET CMOS within standard fabrication processes today.

Room-temperature transistor based on a single carbon nanotube

The use of individual molecules as functional electronic devices was first proposed in the 1970s (ref. 1). Since then, molecular electronics, has attracted much interest, particularly because it

Monolithic three-dimensional integration of carbon nanotube FETs with silicon CMOS

We demonstrate the first VLSI-compatible approach for monolithic three-dimensional (3D) integration of carbon nanotube field effect transistors (CNFETs) with silicon CMOS for high-performance digital