Modern microprocessor built from complementary carbon nanotube transistors
@article{Hills2019ModernMB, title={Modern microprocessor built from complementary carbon nanotube transistors}, author={Gage Hills and Christian Lau and Andrew Wright and Samuel H. Fuller and Mindy D. Bishop and Tathagata Srimani and Pritpal S. Kanhaiya and Rebecca Ho and Aya G. Amer and Yosi Stein and Denis Murphy and Arvind and Anantha P. Chandrakasan and Max M. Shulaker}, journal={Nature}, year={2019}, volume={572}, pages={595-602} }
Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated…
323 Citations
Advances in Carbon Nanotube Technologies: From Transistors to a RISC-V Microprocessor
- Engineering, Computer ScienceISPD
- 2020
Techniques that have recently developed to overcome outstanding challenges are summarized, enabling VLSI CNFET circuits to be experimentally realized today using standard VLSi processing and design flows and demonstrate the most complex CNF ET circuits and systems to-date.
Carbon nanotube transistor technology for More-Moore scaling
- EngineeringNano Research
- 2021
Scaling of silicon field-effect transistors has fueled the exponential development of microelectronics in the past 60 years, but is now close to its physical limits with the critical dimensions of…
Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities
- Materials ScienceNature Electronics
- 2020
Carbon nanotube field-effect transistors (CNFETs) are a promising nanotechnology for the development of energy-efficient computing. Despite rapid progress, CNFETs have only been fabricated in…
Manufacturing Methodology for Carbon Nanotube Electronics
- Computer Science2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
- 2020
This work shows the first complementary CNFET digital systems fabricated in a silicon-CMOS and VLSI-compatible fashion, culminating in a 16-bit microprocessor based on the RISC-V instruction set built entirely out of C NFETs.
Ambipolar carbon nanotube transistors with hybrid nanodielectric for low-voltage CMOS-like electronics
- EngineeringNano Futures
- 2021
The proliferation of place-and-forget devices driven by the exponentially-growing Internet of Things industry has created a demand for low-voltage thin-film transistor (TFT) electronics based on…
Carbon nanotube transistors: Making electronics from molecules
- ChemistryScience
- 2022
Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in…
Variation-Aware Analog Circuit Sizing in Carbon Nanotube
- Computer Science, Engineering2022 IEEE International Symposium on Circuits and Systems (ISCAS)
- 2022
A multi-objective deterministic sizing flow is proposed to approach the best performance of analog CNFET circuits even under device parameter process variation and can better approach the Pareto front than another common stochastic multi- objective optimizer.
Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?
- EngineeringACS applied materials & interfaces
- 2021
The first-principles quantum transport approach is used to explore the performance limit of CNT FETs based on the gate-all-around (GAA) device geometry for the first time and it is found that the GAA CNTFETs can fulfill the ITRS 2028 high-performance target in the 2 nm gate-length node in terms of the on-state current, delay time, and power consumption.
Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays.
- EngineeringACS nano
- 2022
High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors…
Gate Spacer Investigation for Improving the Speed of HF Carbon Nanotube-based Field-Effect Transistors.
- Physics, EngineeringACS applied materials & interfaces
- 2020
Analysis of several FETs with non-symmetrical gate electrode location in the channel, revealed a speed increase of up to 18% measured by the external transit frequency fT and maximum frequency of oscillation fmax.
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