Modern microprocessor built from complementary carbon nanotube transistors

@article{Hills2019ModernMB,
  title={Modern microprocessor built from complementary carbon nanotube transistors},
  author={Gage Hills and Christian Lau and Andrew Wright and Samuel H. Fuller and Mindy D. Bishop and Tathagata Srimani and Pritpal S. Kanhaiya and Rebecca Ho and Aya G. Amer and Yosi Stein and Denis Murphy and Arvind and Anantha P. Chandrakasan and Max M. Shulaker},
  journal={Nature},
  year={2019},
  volume={572},
  pages={595-602}
}
Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated… 
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312 Citations
Highly Influential Citations
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312 Citations

Advances in Carbon Nanotube Technologies: From Transistors to a RISC-V Microprocessor

Techniques that have recently developed to overcome outstanding challenges are summarized, enabling VLSI CNFET circuits to be experimentally realized today using standard VLSi processing and design flows and demonstrate the most complex CNF ET circuits and systems to-date.

Carbon nanotube transistor technology for More-Moore scaling

  • Q. Cao
  • Engineering
    Nano Research
  • 2021
Scaling of silicon field-effect transistors has fueled the exponential development of microelectronics in the past 60 years, but is now close to its physical limits with the critical dimensions of…

Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities

Carbon nanotube field-effect transistors (CNFETs) are a promising nanotechnology for the development of energy-efficient computing. Despite rapid progress, CNFETs have only been fabricated in…

Manufacturing Methodology for Carbon Nanotube Electronics

  • C. LauG. Hills M. Shulaker
  • Computer Science
    2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
  • 2020
This work shows the first complementary CNFET digital systems fabricated in a silicon-CMOS and VLSI-compatible fashion, culminating in a 16-bit microprocessor based on the RISC-V instruction set built entirely out of C NFETs.

Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability

Thanks to its single-atomic-layer structure, high carrier transport, and low power dissipation, carbon nanotube electronics is a leading candidate towards beyond-silicon technologies. Its low…

Ambipolar carbon nanotube transistors with hybrid nanodielectric for low-voltage CMOS-like electronics

The proliferation of place-and-forget devices driven by the exponentially-growing Internet of Things industry has created a demand for low-voltage thin-film transistor (TFT) electronics based on…

Carbon nanotube transistors: Making electronics from molecules

Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in…

Variation-Aware Analog Circuit Sizing in Carbon Nanotube

A multi-objective deterministic sizing flow is proposed to approach the best performance of analog CNFET circuits even under device parameter process variation and can better approach the Pareto front than another common stochastic multi- objective optimizer.

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

The first-principles quantum transport approach is used to explore the performance limit of CNT FETs based on the gate-all-around (GAA) device geometry for the first time and it is found that the GAA CNTFETs can fulfill the ITRS 2028 high-performance target in the 2 nm gate-length node in terms of the on-state current, delay time, and power consumption.

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays.

High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors…
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