Moderate inversion: Analog and RF benchmarking with the EKV3 compact model

Abstract

In this paper the validity of the EKV3 advanced compact MOSFET model is verified with DC and RF measurements of a 90 nm CMOS low-power (LP) process. The model is capable of describing the edge conduction effect, mainly occurring in moderate levels of channel inversion. Non-linearities are extracted from DC measurements and the robustness of the model is… (More)

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