Modelling of the RF self-actuation of electrostatic RF-MEMS devices


This paper presents a study of the self-biasing of RF-MEMS shunt switching devices, and tunable capacitors per extension, taking into account the negative feedback on the electrostatic force introduced by the mismatch. The influence of the RF-power on the DC-actuation is included in the normalised analytical formulas developed for any shunt mismatch… (More)

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