Modelling of Dual-Gate MOSFET 1/f Noise in Linear Region

This paper presents experimental and numerical results for the dual-gate MOSFET (DGMOSFET) normalized 1/f noise parameter B/ID 2 in linear working region. In modelling, gate-to-gate interelectrode space influence is taken into account with the fitting parameter m, which is defined as the ratio of inner transistors channel lengths. Model and methodology for… CONTINUE READING