• DOI:10.1109/23.682621
• Corpus ID: 53451033

Modelling and fabrication of Geiger mode avalanche photodiodes

@article{Kindt1998ModellingAF,
  title={Modelling and fabrication of Geiger mode avalanche photodiodes},
  author={Willem Johannes Kindt and Henk W. van Zeijl},
  journal={IEEE Transactions on Nuclear Science},
  year={1998},
  volume={45},
  pages={715-719}
}

• W. Kindt, H. W. Zeijl
• Published 1 June 1998
• Engineering, Physics
• IEEE Transactions on Nuclear Science

As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, single pixel devices have been made. A CMOS compatible technology is used to allow the future integration of pixels in an array with readout electronics. A model for afterpulsing is presented that relates the afterpulsing probability to the concentration and capture cross section of the traps in the depletion layer. The bias voltage and temperature dependence of the dark count rate is explained by a trap assisted tunneling model. Measured results on fabricated devices are compared with theory.