Modelling and characterization of NAND flash memory channels

@inproceedings{Xu2015ModellingAC,
  title={Modelling and characterization of NAND flash memory channels},
  author={Quan Xu and Pu Gong and Thomas M. Chen and John Michael and Shancang Li},
  year={2015}
}
The threshold voltage distribution after ideal programming in NAND flash memory cells is usually distorted by a combination of the random telegraph noise (RTN), cell-to-cell Interference (CCI), and the retention process. To decide the original bits more accurately in this scenario, a precise channel model shall be utilized on the basis of the measured threshold voltages. This paper aims to characterize these various distortions occurring in multi-level cell (MLC) flash memories. A mathematical… CONTINUE READING

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