Modelling and analysis of scaled MOSFET devices and circuit simulation

Abstract

A new approach of extremely scaled MOSFET device based on modified BSIM4v6 is presented for modelling and analysis. The model ensures the continuities of current-voltage, conductance and transconductance through all voltage bias conditions. The improved model has been enhanced by device parameters and dimensions to accounts for all use in various device… (More)
DOI: 10.1109/ICECS.2009.5410889

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Cite this paper

@article{ElMuradi2009ModellingAA, title={Modelling and analysis of scaled MOSFET devices and circuit simulation}, author={Mustafa M. El-Muradi and Mohamed A. El-Mansouri}, journal={2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)}, year={2009}, pages={475-478} }