Modelling an Insulated Gate Bipolar Transistor Using Bond Graph Techniques

Abstract

Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a new power device which combines a bipolar transistor with a MOSFET transistor. We develop a new IGBT bond graph model. The bond graph techniques give us good primary simulation results. We present in this paper the principle and the results of this modelling method.

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Cite this paper

@inproceedings{Besbes2005ModellingAI, title={Modelling an Insulated Gate Bipolar Transistor Using Bond Graph Techniques}, author={Kamel Besbes}, year={2005} }