Modeling the behavior of amorphous oxide thin film transistors before and after bias stress
This paper presents the expressions and procedure for precise and simple modeling of the subthreshold region of OTFTs. The total drain current in the OTFT is calculated as the sum of two components, one calculated in above threshold regime plus the one corresponding to the below threshold regime. The tanh function is used to sew both regions. Good agreement between measured and modeled characteristics is shown in two OTFTs, one of tip pentacene and another of F8T2.