Modeling the subthreshold region of OTFTs

Abstract

This paper presents the expressions and procedure for precise and simple modeling of the subthreshold region of OTFTs. The total drain current in the OTFT is calculated as the sum of two components, one calculated in above threshold regime plus the one corresponding to the below threshold regime. The tanh function is used to sew both regions. Good agreement between measured and modeled characteristics is shown in two OTFTs, one of tip pentacene and another of F8T2.

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Cite this paper

@article{Cerdeira2011ModelingTS, title={Modeling the subthreshold region of OTFTs}, author={Antonio Cerdeira and Magali Estrada and Benjam{\'i}n I{\~n}{\'i}guez and Stalia Soto}, journal={2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control}, year={2011}, pages={1-4} }