Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode

Abstract

Hot carrier degradation is critical for LDMOS transistors especially in applications where inductive loads are repetitively switched. In this work, a model for predicting the hot carrier degradation of an LDMOS in dynamic operation conditions is developed and verified for a device driving an inductive load in repetitive clamping mode. Device simulations are… (More)

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Cite this paper

@article{Riedlberger2010ModelingTL, title={Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode}, author={E. Riedlberger and Roger Keller and Hans Reisinger and Wolfgang Gustin and Anja Spitzer and Matthias Stecher and Christoph Jungemann}, journal={2010 IEEE International Reliability Physics Symposium}, year={2010}, pages={175-181} }