Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region

@article{Papadopoulos2006ModelingTI,
  title={Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region},
  author={Nikolaos P. Papadopoulos and Alkis A. Hatzopoulos and Dimitris K. Papakostas and Charalabos A. Dimitriadis and Stilianos Siskos},
  journal={2006 IEEE International Symposium on Circuits and Systems},
  year={2006},
  pages={4 pp.-432}
}
The influence of the light illumination on the drain current of polycrystalline silicon thin-film transistors is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different Vds and Vgs values. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region 

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References

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Showing 1-3 of 3 references

Stoemenos, 'Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thintransistors

  • V. Farmakis, G. Kamarinos, J. Brini
  • J. Appl. Phys.,
  • 1999

Stoemenos, 'Excimer laser annealing of amorphous and solid-phase-crystallized silicon films,

  • J. M. Mitsutoshi
  • J. Appl. Phys.,
  • 1999

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