Modeling the Coupling through Substrate for Frequencies up to 100GHz


A study on the coupling through substrate using the case of two square metal pads over bulk silicon substrate with epitaxial layer is presented. A lightly doped profile is adopted and it is simulated by means of an electromagnetic simulator for various pad distances and different metal layers, assuming a 65 nm bulk CMOS technology. Suggestions how to reduce… (More)
DOI: 10.1109/DDECS.2015.25


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