Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs

@article{Mangla2014ModelingTC,
  title={Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs},
  author={Anurag Mangla and Jean-Michel Sallese and Carlos Sampedro and Francisco Gamiz and Christian C. Enz},
  journal={IEEE Transactions on Electron Devices},
  year={2014},
  volume={61},
  pages={2640-2646}
}
In this paper, we present an analytical semiempirical model of the profile of the channel charge and potential in quasi-ballistic double-gate (DG) MOSFETs. The charge model is based on the premise of separating the charge density in the quasi-ballistic channel into two hypothetical components: 1) exclusively ballistic (collision-free) and 2) collision-dominated components, which are governed by the same electrostatics. These components are related to each other through a ballisticity parameter… CONTINUE READING
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