Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region

Abstract

We have studied the mobility in the FDSOI devices as a function of silicon thickness, doping, surface orientation and applying different back biases. This study is also done in the near-spacer-region that is partially inverted. Simulations have been obtained with a self-consistent Poisson-Schrödinger which provides a precise energy distribution of carriers… (More)

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