Modeling static and dynamic behavior of power devices

  title={Modeling static and dynamic behavior of power devices},
  author={Siegfried Selberherr},
  journal={1983 International Electron Devices Meeting},
Comments on models of physical parameters involved in numerical power device simulation are given. Problems associated with carrier-carrier scattering, recombination and heavy doping are stressed. A transient quasi-three-dimensional simulation of a thyristor illustrates the state of the art in numerical power device modeling. 

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