Modeling power semiconductor losses in HEV powertrains using Si and SiC devices

@article{Reed2010ModelingPS,
  title={Modeling power semiconductor losses in HEV powertrains using Si and SiC devices},
  author={Justin K. Reed and James D. McFarland and Jagadeesh K. Tangudu and Emmanuel Vinot and Rochdi Trigui and Giri Venkataramanan and Shiv Gupta and Thomas M. Jahns},
  journal={2010 IEEE Vehicle Power and Propulsion Conference},
  year={2010},
  pages={1-6}
}
Silicon carbide (SiC) power semiconductor devices are known to have potential benefits over conventional silicon (Si) devices, particularly in high power applications such as hybrid electric vehicles (HEVs). Recent literature studying the use of SiC JFETs in HEV inverters indicate a substantially increased gas mileage. This paper further investigates this change in inverter efficiency due to the adoption of SiC using analytical loss models and empirical loss data obtained from experimental Cree… CONTINUE READING
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