Modeling oxide thickness dependence of charging damage by plasma processing

@article{Shin1993ModelingOT,
  title={Modeling oxide thickness dependence of charging damage by plasma processing},
  author={Hyunchol Shin and Ko Noguchi and Cong Hu},
  journal={IEEE Electron Device Letters},
  year={1993},
  volume={14},
  pages={509-511}
}
Develops a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The current is deduced from capacitance-voltage (CV) curves of metal-oxide-semiconductor (MOS) capacitors after plasma etch. The model predicts the oxide thickness dependence of plasma charging successfully. It is shown that plasma acting on a very thin oxide during processing may be modeled as essentially a current source. Thus the damage will not be greatly… CONTINUE READING

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