Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

@inproceedings{Dey2018ModelingOT,
  title={Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode},
  author={Swagata Dey and Vedatrayee Chakraborty and Bratati Mukhopadhyay and Gopa Sen},
  year={2018}
}
The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge1−zCz on Si1−x−yGexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based… CONTINUE READING
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