Modeling of the semiconductor devices with the IET and involving the impact ionization

Abstract

The approach to build-up of a numerical model of semiconductor devices on basis of the electron transfer effect is offered in view of the impact ionization, providing stability of an iterative process at origin of the considerable excess concentration of generated by the impact ionization charge carriers

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Cite this paper

@article{Prokhorov2005ModelingOT, title={Modeling of the semiconductor devices with the IET and involving the impact ionization}, author={E P Prokhorov and D. V. PavIenko}, journal={Proceedings of LFNM 2005. 7th International Conference on Laser and Fiber-Optical Networks Modeling, 2005.}, year={2005}, pages={297-300} }