Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode

Abstract

Modeling of resonant detection of terahertz (THz) radiation of Metal-Oxide-Semiconductor (MOS) field effect transistors (FETs) under the optical beating mode is studied in this paper. An analytical model is first proposed which covers all operation regions of FETs from sub-threshold to the strong inversion, and then is verified by the numerical tool which has been improved to simulate THz detection characteristics under the case of optical beating. Furthermore, extensive characteristics of resonant detection under the optical beating mode have been predicted.

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Cite this paper

@article{Zhu2010ModelingOT, title={Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode}, author={Jingxuan Zhu and Zhifeng Yan and Yinglei Wang and Xinnan Lin and Jin He and Wen Wu and Zhiwei Liu and Wenping Wang and Yong Ma and Juncheng Cao}, journal={2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology}, year={2010}, pages={1826-1828} }