Modeling of reverse subthreshold currents in the A-Si:H TFTs

Abstract

This paper proposed a physical model for reverse subthreshold currents in the amorphous silicon thin film transistors. Firstly, an approximation for the band bending in the back interface as a function of gate-source voltage is derived. By considering of deep states, a current model based on electron conduction in the back channel is then developed. Finally… (More)

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