Modeling of parasitic elements in high voltage multiplier modules

@inproceedings{Wang2014ModelingOP,
  title={Modeling of parasitic elements in high voltage multiplier modules},
  author={J. Wang},
  year={2014}
}
It is an inevitable trend that the power conversion module will have higher switching frequency and smaller volume in the future. Bandgap devices, such as SiC and GaN devices, accelerate the process. With this process, the parasitic elements in the module will probably have stronger influence on circuit operations than before. In this thesis, modeling of parasitic elements in the HV multiplier module of the HV generator in medical X-ray machines is addressed. The modeling is studied in two… Expand
Accurate Switching Performance Prediction and Characterization For Wide Range, High Frequency SiC High Voltage Generator

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