Modeling of nonlinear power amplifier with memory effects applied for 3G system

@article{Peng2005ModelingON,
  title={Modeling of nonlinear power amplifier with memory effects applied for 3G system},
  author={Chong Peng and Wei Xiang Jiang and Yan Ni and Jingqi Wang and Xuan Yu and Bo Bin Xing and Xiaowei Zhu},
  journal={2005 Asia-Pacific Microwave Conference Proceedings},
  year={2005},
  volume={2},
  pages={3 pp.-}
}
In this paper, the nonlinear modeling of power amplifier with remarkable memory effects is presented. The power amplifier was designed by using LDMOS, and was driven by one-carrier W-CDMA signal and four-carrier W-CDMA signal respectively. Two different models, V-vector Volterra model and MPMSD model, are extracted from the power amplifier and the performances on capturing memory effects of the power amplifier are compared. The simulation results show that the MPMSD model is more accurate and… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-5 OF 5 REFERENCES

Brazil: “An Efficient Volterra-Based Behavioral Model for Wideband RF Power Amplifiers

Anding Zhu, Michael Wren, J Thomas
  • IEEE MTT-S Digest,
  • 2003
VIEW 1 EXCERPT

Validation of power amplifier nonlinear block models

  • 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)
  • 1999
VIEW 1 EXCERPT

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